Datasheet > 2N7519

2N7519

更新时间： 2024-11-28 02:57:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
1页	19K
描述
MOSFET Transistor P-Channel

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2N7519 数据手册

Preliminary Data Sheet

Repetitive Avalanche and dv/dt Rated

MOSFET Transistor P-Channel

2N7519

30 Volt, 0.035 W , RAD Hard MOSFET

Package: SMD-0.5

Product Summary

Hex Size

Technology

BV_DSS

R_{DS (on)}

I_D

RAD Hard

-30V

0035 W

-22*A

Absolute Maximum Ratings

Parameter

Value

Units

I_D@V_GS= -12V, T_C= 25°C

Continuous Drain Current

Power Dissipation

-22*

-19

I_D@V_GS= -12V, T_C= 100°C

P_D@ T_C= 25°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

±20

250

-22

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction Range

7.5

°C

-55 to 150

Pre-Irradiation

Electrical Characteristics @ T_J= 25° C (Unless Otherwise Specified)

Parameter

Min

-30

Typ.

Max

Units Test Conditions

BV_DSSDrain-to-Source Breakdown Voltage

V_GS=0V, I_D=-1.0mA

V_GS=-12V, I_D=-19A

R_DS(on)

Static Drain-to-Source On-State

Resistance

0.035

V_{GS (th)}

I_DSS

Gate Threshold Voltage

-2.0

-4.0

-10

V_DS=V_GS, I_D=-1.0mA

V_DS= -24V, V_GS=0V

V_DS=-24V, T_J=125°C

Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

I_DSS

-25

I_GSS

-100

100

V_GS=-20V

V_GS=20V

V_GS=-12V, I_D=-22A

Thermal Resistance

Parameter

Min

Typ.

Max

Units

Test Conditions

R_thJCJunction-to-Case

167

°C/W

*Current is limited by internal wire size

01/23/01

中文翻译

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