Datasheet > 2N7635M1

2N7635M1

更新时间： 2024-09-17 19:44:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
16页	300K
描述
Transistor,

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技术参数
数据手册

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2N7635M1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.92
最大漏极电流 (Abs) (ID)：	1.07 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2N7635M1 数据手册

PRELIMINARY

PD-97191B

2N7635M1

IRHLG7670Z4

60V, Combination 2N-2P-CHANNEL

TECHNOLOGY

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (MO-036AB)

Product Summary

Part Number

Radiation Level

CHANNEL

DS(on)

1.07A

-0.71A

1.07A

-0.71A

0.6Ω

1.25Ω

0.6Ω

IRHLG7670Z4

100K Rads (Si)

IRHLG7630Z4

300K Rads (Si)

1.25Ω

MO-036AB

International Rectifier’s R7^TMLogic Level Power

MOSFETs provide simple solution to interfacing

CMOS and TTL control circuits to power devices in

space and other radiation environments. The

threshold voltage remains within acceptable

operating limits over the full operating temperature

and post radiation. This is achieved while maintaining

single event gate rupture and single event burnout

immunity.

Features:

5V CMOS and TTL Compatible

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are used in applications such as

current boost low signal source in PWM, voltage

comparator and operational amplifiers.

Pre-Irradiation

Absolute Maximum Ratings (Per Die)

Parameter

N-Channel

1.07

P-Channel

-0.71

-0.45

-2.84

1.0

Units

I @ V

= ±4.5V, T = 25°C Continuous Drain Current

I @ V

= ±4.5V, T =100°C Continuous Drain Current

0.67

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

4.28

@ T = 25°C

1.0

W/°C

0.01

±10

Single Pulse Avalanche Energy

Avalanche Current À

13 Á

1.07

21 ²

-0.71

0.1

dv/dt

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt

Operating Junction

0.1

V/ns

7.0 Â

-14 ³

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

03/01/11

12 3 4 5 6 7...16

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