是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | 风险等级: | 5.4 |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-18 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
最大关闭时间(toff): | 75 ns | 最大开启时间(吨): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N757A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N757AJ | RAYTHEON |
获取价格 |
Transistor, | |
2N7580T1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Me | |
2N759A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N759AJ | RAYTHEON |
获取价格 |
Transistor, | |
2N760 | MICRO-ELECTRONICS |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | |
2N7604U2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
2N7607T3 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Met | |
2N7608T2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.32ohm, 1-Element, N-Channel, Silicon, Meta | |
2N7609U8 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me |