Datasheet > 2N7625T3

2N7625T3

更新时间： 2024-09-17 14:48:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
9页	202K
描述
Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN

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2N7625T3 数据手册

PD-97292A

2N7625T3

IRHLYS797034CM

60V, P-CHANNEL

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

IRHLYS797034CM 100K Rads (Si) 0.074Ω -20A*

IRHLYS793034CM 300K Rads (Si) 0.074Ω -20A*

Low-Ohmic

TO-257AA

International Rectifier’s R7^TMLogic Level Power

MOSFETs provide simple solution to interfacing

CMOS and TTL control circuits to power devices in

space and other radiation environments. The

threshold voltage remains within acceptable

operating limits over the full operating temperature

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

and post radiation.

This is achieved while

maintaining single event gate rupture and single

event burnout immunity.

These devices are used in applications such as

current boost low signal source in PWM, voltage

comparator and operational amplifiers.

Complimentary N-Channel Available -

IRHLYS77034CM

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

I @V

= -4.5V, T = 25°C Continuous Drain Current

-20*

= -4.5V, T = 100°C Continuous Drain Current

-16.6

-80

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±10

181

-20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

10.9

-55 to 150

Storage Temperature Range

°C

STG

Lead Temperature

Weight

300 (0.063in/1.6mm from case for 10s)

4.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

10/05/10

12 3 4 5 6 7...9

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