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2N7632UC PDF预览

2N7632UC

更新时间: 2024-09-17 06:21:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
16页 300K
描述
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET

2N7632UC 数据手册

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PD-97268A  
2N7632UC  
IRHLUC7670Z4  
RADIATION HARDENED  
60V, Combination 1N-1P-CHANNEL  
LOGIC LEVEL POWER MOSFET  
SURFACE MOUNT (LCC-6)  
TECHNOLOGY  
™
Product Summary  
Part Number  
Radiation Level  
CHANNEL  
R
I
D
DS(on)  
0.89A  
-0.65A  
0.89A  
-0.65A  
0.75Ω  
1.60Ω  
0.75Ω  
1.60Ω  
N
P
N
P
IRHLUC7670Z4  
100K Rads (Si)  
IRHLUC7630Z4  
300K Rads (Si)  
LCC-6  
International Rectifier’s R7TM Logic Level Power MOSFETs  
provide simple solution to interfacing CMOS and TTL control  
circuits to power devices in space and other radiation  
environments.The threshold voltage remains within  
acceptable operating limits over the full operating  
temperature and post radiation.This is achieved while  
maintaining single event gate rupture and single event  
burnout immunity.  
Features:  
n
5V CMOS and TTL Compatible  
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
The device is ideal when used to interface directly with most  
logic gates, linear IC’s, micro-controllers, and other device  
types that operate from a 3.3-5V source. It may also be  
used to increase the output current of a PWM, voltage  
comparator or an operational amplifier where the logic level  
drive signal is available.  
Pre-Irradiation  
Absolute Maximum Ratings (Per Die)  
Parameter  
N-Channel  
0.89  
P-Channel  
-0.65  
-0.41  
-2.6  
Units  
I @ V  
= ±4.5V, T = 25°C Continuous Drain Current  
D
GS  
GS  
C
A
I @ V  
D
= ±4.5V, T =100°C Continuous Drain Current  
0.56  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current À  
3.56  
DM  
@ T = 25°C  
P
D
1.0  
1.0  
W
W/°C  
V
C
0.01  
0.01  
V
±10  
±10  
GS  
E
20 Á  
0.89  
34 ²  
-0.65  
0.1  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt  
Operating Junction  
0.1  
mJ  
V/ns  
AR  
dv/dt  
4.7 Â  
-5.6 ³  
T
-55 to 150  
J
T
Storage Temperature Range  
Pckg. Mounting Surface Temp.  
Weight  
°C  
g
STG  
300 (for 5s)  
0.2 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
10/18/10  

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