PD-97268A
2N7632UC
IRHLUC7670Z4
RADIATION HARDENED
60V, Combination 1N-1P-CHANNEL
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-6)
TECHNOLOGY
Product Summary
Part Number
Radiation Level
CHANNEL
R
I
D
DS(on)
0.89A
-0.65A
0.89A
-0.65A
0.75Ω
1.60Ω
0.75Ω
1.60Ω
N
P
N
P
IRHLUC7670Z4
100K Rads (Si)
IRHLUC7630Z4
300K Rads (Si)
LCC-6
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
Features:
n
5V CMOS and TTL Compatible
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
N-Channel
0.89
P-Channel
-0.65
-0.41
-2.6
Units
I @ V
= ±4.5V, T = 25°C Continuous Drain Current
D
GS
GS
C
A
I @ V
D
= ±4.5V, T =100°C Continuous Drain Current
0.56
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
3.56
DM
@ T = 25°C
P
D
1.0
1.0
W
W/°C
V
C
0.01
0.01
V
±10
±10
GS
E
20 Á
0.89
34 ²
-0.65
0.1
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
Operating Junction
0.1
mJ
V/ns
AR
dv/dt
4.7 Â
-5.6 ³
T
-55 to 150
J
T
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
°C
g
STG
300 (for 5s)
0.2 (Typical)
For footnotes refer to the last page
www.irf.com
1
10/18/10