是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.37 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 76 |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N760ALEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N760B | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18 | |
2N7610T2 | INFINEON |
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Power Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal | |
2N7612M1 | INFINEON |
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Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 4-Element, N-Channel, Silicon, Meta | |
2N7614M1 | INFINEON |
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Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Met | |
2N7617UC | INFINEON |
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Small Signal Field-Effect Transistor, 0.89A I(D), 60V, 2-Element, N-Channel, Silicon, Meta | |
2N7618M1 | INFINEON |
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Small Signal Field-Effect Transistor, 1.07A I(D), 60V, 4-Element, N-Channel, Silicon, Meta | |
2N7622U2 | INFINEON |
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RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) | |
2N7624U3 | INFINEON |
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Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Met | |
2N7625T3 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Met |