Datasheet > 2N7522

2N7522

更新时间： 2024-11-28 02:57:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
1页	19K
描述
Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7522 数据手册

Preliminary Data Sheet

Repetitive Avalanche and dv/dt Rated

MOSFET Transistor P-Channel

2N7522

200Volt, 0.505 W , RAD Hard MOSFET

Package: SMD-0.5

Product Summary

Hex Size

Technology

BV_DSS

R_{DS (on)}

I_D

RAD Hard

-200V

0.505 W

-8.0A

Absolute Maximum Ratings

Parameter

Value

Units

I_D@V_GS= -12V, T_C= 25°C

Continuous Drain Current

Power Dissipation

-8.0

-5.0

I_D@V_GS= -12V, T_C= 100°C

P_D@ T_C= 25°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

±20

-8.0

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction Range

7.5

°C

-55 to 150

Pre-Irradiation

Electrical Characteristics @ T_J= 25° C (Unless Otherwise Specified)

Parameter

Min

Typ.

Max

Units Test Conditions

BV_DSSDrain-to-Source Breakdown Voltage -200

V_GS=0V, I_D=-1.0mA

V_GS=-12V, I_D=-5.0A

R_DS(on)

Static Drain-to-Source On-State

Resistance

0.505

V_{GS (th)}

I_DSS

Gate Threshold Voltage

-2.0

-4.0

-10

V_DS=V_GS, I_D=-1.0mA

V_DS= -160V, V_GS=0V

V_DS=-160V, T_J=125°C

Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

I_DSS

-25

I_GSS

-100

100

V_GS=-20V

V_GS=20V

V_GS=-12V, I_D=-8.0A

Thermal Resistance

Parameter

Min

Typ.

Max

Units

Test Conditions

R_thJCJunction-to-Case

1.67 °C/W

01/23/01

中文翻译

下载PDF

与2N7522相关器件

型号	品牌	获取价格	描述	数据表
2N7524	INFINEON	获取价格	Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel
2N753	CENTRAL	获取价格	Small Signal Transistors
2N753LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
2N757A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
2N757AJ	RAYTHEON	获取价格	Transistor,
2N7580T1	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Me
2N759A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
2N759AJ	RAYTHEON	获取价格	Transistor,
2N760	MICRO-ELECTRONICS	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
2N7604U2	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met