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ZXMN3B14FTA PDF预览

ZXMN3B14FTA

更新时间: 2024-11-25 02:54:47
品牌 Logo 应用领域
美台 - DIODES 栅极驱动开关光电二极管晶体管
页数 文件大小 规格书
7页 222K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

ZXMN3B14FTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:0.85
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):2.9 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMN3B14FTA 数据手册

 浏览型号ZXMN3B14FTA的Datasheet PDF文件第2页浏览型号ZXMN3B14FTA的Datasheet PDF文件第3页浏览型号ZXMN3B14FTA的Datasheet PDF文件第4页浏览型号ZXMN3B14FTA的Datasheet PDF文件第5页浏览型号ZXMN3B14FTA的Datasheet PDF文件第6页浏览型号ZXMN3B14FTA的Datasheet PDF文件第7页 
ZXMN3B14F  
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE  
SUMMARY  
V
=30V : R  
(
)=0.08 ; I =3.5A  
(BR)DSS  
DS on D  
DESCRIPTION  
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that  
combines the benefits of low on-resistance with fast switching speed. This makes  
them ideal for high efficiency, low voltage, power management applications.  
FEATURES  
PACKAGE  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23 package  
APPLICATIONS  
DC-DC converters  
Power management functions  
Disconnect switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN3B14FTA  
7”  
8mm  
8mm  
3,000 units  
ZXMN3B14FTC  
13”  
10,000 units  
DEVICE MARKING  
3B4  
ISSUE 2 - JANUARY 2006  
1
SEMICONDUCTORS  

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