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ZXMN3G32DN8 PDF预览

ZXMN3G32DN8

更新时间: 2024-10-30 03:52:27
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
8页 415K
描述
30V SO8 dual N-channel enhancement mode MOSFET

ZXMN3G32DN8 数据手册

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ZXMN3G32DN8  
30V SO8 dual N-channel enhancement mode MOSFET  
Summary  
V
R
()  
I (A)  
(BR)DSS  
DS(on)  
D
30  
0.028 @ V = 10V  
7.1  
5.6  
GS  
0.045 @ V = 4.5V  
GS  
Description  
This new generation Trench MOSFET from Zetex features low on-  
resistance and fast switching speed.  
Features  
D1  
D2  
S2  
Low on-resistance  
4.5V gate drive capability  
Fast switching bullet  
G1  
G2  
Applications  
S1  
DC-DC Converters  
Power management functions  
Motor Control  
S1  
D1  
D1  
D2  
D2  
G1  
S2  
G2  
Backlighting  
Ordering information  
DEVICE  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMN3G32DN8TA  
7
12  
500  
Device marking  
ZXMN  
3G32D  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
1
www.zetex.com  

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