生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.36 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 4.6 A | 最大漏源导通电阻: | 0.035 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMN3F31DN8 | ZETEX |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN3F31DN8 | DIODES |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN3F31DN8TA | ZETEX |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN3F31DN8TA | DIODES |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN3G32DN8 | DIODES |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN3G32DN8 | ZETEX |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN3G32DN8TA | ZETEX |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN3G32DN8TA | DIODES |
获取价格 |
30V SO8 dual N-channel enhancement mode MOSFET | |
ZXMN4A06G | DIODES |
获取价格 |
40V N-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMN4A06GQ | DIODES |
获取价格 |
40V N-CHANNEL ENHANCEMENT MODE MOSFET |