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ZXMN3F318DN8

更新时间： 2024-09-13 07:42:31

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
12页	244K
描述
30V SO8 Asymmetrical dual N-channel enhancement mode

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中文翻译

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数据手册

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ZXMN3F318DN8 数据手册

Part no.

ZXMN3F318DN8

30V SO8 Asymmetrical dual N-channel enhancement mode

MOSFET

Summary

Q_G(nC)

I_D(A)

7.3

Device V_(BR)DSS

R_DS(on)(Ω)

0.024 @ V = 10V

12.9

0.039 @ V = 4.5V

5.7

0.035 @ V = 10V

0.055 @ V = 4.5V

4.8

Description

This new generation dual Trench MOSFET from Zetex features low on-resistance achievable

with low (4.5V) gate drive.

Features

•

Low on-resistance

4.5V gate drive capability

Low profile SOIC package

Applications

•

DC-DC Converters

SMPS

Load switching

Motor control

Backlighting

Ordering information

Device

Reel size

(inches)

Tape width

(mm)

Quantity

per reel

500

ZXMN3F318DN8TA

Device marking

Pinout – top view

ZXMN

3F318

Issue 1 – March 2008

www.zetex.com

12 3 4 5 6 7...12

中文翻译

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ZXMN3F318DN8TA	ZETEX	获取价格	30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
ZXMN3F318DN8TA	DIODES	获取价格	30V SO8 Asymmetrical dual N-channel enhancement mode
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ZXMN3F31DN8	DIODES	获取价格	30V SO8 dual N-channel enhancement mode MOSFET
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ZXMN3G32DN8TA	DIODES	获取价格	30V SO8 dual N-channel enhancement mode MOSFET