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ZXMN4A06K PDF预览

ZXMN4A06K

更新时间: 2024-10-30 03:47:23
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
8页 559K
描述
40V N-channel enhancement mode MOSFET

ZXMN4A06K 数据手册

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ZXMN4A06K  
40V N-channel enhancement mode MOSFET  
Summary  
V
= -40V; R  
= 0.05; I = 10.9A  
DS(ON) D  
(BR)DSS  
Description  
This new generation of trench MOSFETs from Zetex utilizes a unique  
structure that combines the benefits of low on-resistance with fast  
switching speed. This makes them ideal for high efficiency, low voltage,  
power management applications.  
Features  
D
S
Low on-resistance  
Fast switching speed  
Low threshold  
G
Low gate drive  
DPAK package  
Applications  
DC - DC converters  
Audio output stages  
Relay and solenoid driving  
Motor control  
Ordering information  
Device  
Reel size Tape width Quantity  
(inches)  
(mm)  
per reel  
ZXMN4A06KTC  
13  
16  
2,500  
Device marking  
Pinout - Top view  
ZXMN  
4A06  
Issue 1 - March 2006  
© Zetex Semiconductors plc 2005  
1
www.zetex.com  

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