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ZXMN3F30FH PDF预览

ZXMN3F30FH

更新时间: 2024-11-24 12:31:03
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
3页 122K
描述
30V SOT23 N-channel enhancement mode MOSFET Low on-resistance

ZXMN3F30FH 数据手册

 浏览型号ZXMN3F30FH的Datasheet PDF文件第2页浏览型号ZXMN3F30FH的Datasheet PDF文件第3页 
Product specification  
ZXMN3F30FH  
30V SOT23 N-channel enhancement mode MOSFET  
Summary  
V
R
(Ω)  
I (A)  
(BR)DSS  
DS(on)  
D
30  
0.047 @ V = 10V  
4.6  
4.0  
GS  
0.065 @ V = 4.5V  
GS  
Description  
This new generation Trench MOSFET from TY features low on-  
resistance achievable with 4.5V gate drive.  
Features  
D
S
Low on-resistance  
4.5V gate drive capability  
SOT23  
G
Applications  
DC-DC Converters  
Power management functions  
Motor Control  
Ordering information  
S
DEVICE  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
D
ZXMN3F30FHTA  
7
8
3000  
G
Device marking  
KNA  
Top view  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 3  

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