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ZXMN3F31DN8 PDF预览

ZXMN3F31DN8

更新时间: 2024-10-30 02:54:19
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
8页 466K
描述
30V SO8 dual N-channel enhancement mode MOSFET

ZXMN3F31DN8 数据手册

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ZXMN3F31DN8  
30V SO8 dual N-channel enhancement mode MOSFET  
Summary  
V
R
()  
I (A)  
(BR)DSS  
DS(on)  
D
30  
0.024 @ V = 10V  
7.3  
5.7  
GS  
0.039 @ V = 4.5V  
GS  
Description  
This new generation Trench MOSFET from Zetex features low on-  
resistance achievable with 4.5V gate drive.  
Features  
D1  
D2  
S2  
Low on-resistance  
4.5V gate drive capability  
G1  
G2  
Applications  
DC-DC Converters  
Power management functions  
Load switching  
S1  
S1  
D1  
D1  
D2  
D2  
Motor control  
G1  
S2  
G2  
Back lighting  
Ordering information  
DEVICE  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMN3F31DN8TA  
7
12  
500  
Device marking  
ZXMN  
3F31D  
Issue 1 - January 2008  
© Zetex Semiconductors plc 2008  
1
www.zetex.com  

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