VS-FA40SA50LC
Vishay Semiconductors
www.vishay.com
Power MOSFET, 40 A
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL approved file E78996
• Designed for industrial level
SOT-227
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRIMARY CHARACTERISTICS
Third generation power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.
VDSS
RDS(on)
ID
500 V
106 m
40 A
Type
Modules - MOSFET
SOT-227
Package
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 25 °C
C = 90 °C
MAX.
UNITS
40
29
Continuous drain current at VGS 10 V
Pulsed drain current
ID
T
A
(1)
IDM
150
543
261
20
TC = 25 °C
TC = 90 °C
Power dissipation
PD
W
Gate to source voltage
VGS
V
mJ
A
(2)
Single pulse avalanche energy
Repetitive avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
EAS
400
13
(1)
IAR
(1)
EAR
42
mJ
V/ns
°C
dV/dt (3)
10
Operating junction and storage temperature range TJ, TStg
-55 to +150
2.5
Insulation withstand voltage (AC-RMS)
Mounting torque
VISO
kV
M4 screw, on terminals and heatsink
1.3
Nm
Notes
(1)
(2)
(3)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)
Starting TJ = 25 °C, L = 500 μH, Rg = 2.4 , IAS = 40 A (see fig. 18)
ISD 40 A, dIF/dt 200 A/μs, VDD V(BR)DSS, TJ 150 °C
Revision: 02-Oct-2018
Document Number: 94803
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000