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VS-FA40SA50LC PDF预览

VS-FA40SA50LC

更新时间: 2024-10-30 14:55:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 205K
描述
Power MOSFET, 40 A

VS-FA40SA50LC 数据手册

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VS-FA40SA50LC  
Vishay Semiconductors  
www.vishay.com  
Power MOSFET, 40 A  
FEATURES  
• Fully isolated package  
• Easy to use and parallel  
• Low on-resistance  
• Dynamic dV/dt rating  
• Fully avalanche rated  
• Simple drive requirements  
• Low drain to case capacitance  
• Low internal inductance  
• UL approved file E78996  
• Designed for industrial level  
SOT-227  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION  
PRIMARY CHARACTERISTICS  
Third generation power MOSFETs from Vishay  
Semiconductors provide the designer with the best  
combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
The SOT-227 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 500 W. The low thermal resistance  
of the SOT-227 contribute to its wide acceptance  
throughout the industry.  
VDSS  
RDS(on)  
ID  
500 V  
106 m  
40 A  
Type  
Modules - MOSFET  
SOT-227  
Package  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 25 °C  
C = 90 °C  
MAX.  
UNITS  
40  
29  
Continuous drain current at VGS 10 V  
Pulsed drain current  
ID  
T
A
(1)  
IDM  
150  
543  
261  
20  
TC = 25 °C  
TC = 90 °C  
Power dissipation  
PD  
W
Gate to source voltage  
VGS  
V
mJ  
A
(2)  
Single pulse avalanche energy  
Repetitive avalanche current  
Repetitive avalanche energy  
Peak diode recovery dV/dt  
EAS  
400  
13  
(1)  
IAR  
(1)  
EAR  
42  
mJ  
V/ns  
°C  
dV/dt (3)  
10  
Operating junction and storage temperature range TJ, TStg  
-55 to +150  
2.5  
Insulation withstand voltage (AC-RMS)  
Mounting torque  
VISO  
kV  
M4 screw, on terminals and heatsink  
1.3  
Nm  
Notes  
(1)  
(2)  
(3)  
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)  
Starting TJ = 25 °C, L = 500 μH, Rg = 2.4 , IAS = 40 A (see fig. 18)  
ISD 40 A, dIF/dt 200 A/μs, VDD V(BR)DSS, TJ 150 °C  
Revision: 02-Oct-2018  
Document Number: 94803  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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