5秒后页面跳转
UPA2721GR-E1 PDF预览

UPA2721GR-E1

更新时间: 2024-11-06 15:56:03
品牌 Logo 应用领域
瑞萨 - RENESAS 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 274K
描述
19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, POWER SOP-8

UPA2721GR-E1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:POWER SOP-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.77
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):19 A最大漏源导通电阻:0.0063 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UPA2721GR-E1 数据手册

 浏览型号UPA2721GR-E1的Datasheet PDF文件第2页浏览型号UPA2721GR-E1的Datasheet PDF文件第3页浏览型号UPA2721GR-E1的Datasheet PDF文件第4页浏览型号UPA2721GR-E1的Datasheet PDF文件第5页浏览型号UPA2721GR-E1的Datasheet PDF文件第6页浏览型号UPA2721GR-E1的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

与UPA2721GR-E1相关器件

型号 品牌 获取价格 描述 数据表
UPA2721GR-E1-A RENESAS

获取价格

19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8
UPA2721GR-E1-A NEC

获取价格

Power Field-Effect Transistor, 19A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
UPA2721GR-E2-A RENESAS

获取价格

19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8
UPA2723T1A-E1-AY NEC

获取价格

Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723T1A-E1-AZ NEC

获取价格

Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723UT1A-E1-AZ NEC

获取价格

Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723UT1A-E2-AY NEC

获取价格

Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723UT1A-E2-AZ NEC

获取价格

Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2725T1A-E1-AY NEC

获取价格

Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
UPA2725T1A-E1-AZ NEC

获取价格

Switching N-Channel Power MOSFET, HVSON, /Embossed Tape