Datasheet > TPCS8105_07

TPCS8105_07

更新时间： 2024-11-24 03:26:47

品牌	Logo	应用领域
东芝 - TOSHIBA		电池电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	256K
描述
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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TPCS8105_07 数据手册

TPCS8105

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPCS8105

Lithium Ion Battery Applications

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 9.6 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 23 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −30 V)

DSS

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

1,2,3

Source

Gate

5,6,7,8 Drain

JEDEC

JEITA

―

Absolute Maximum Ratings (Ta = 25°C)

―

Characteristics

Drain-source voltage

Symbol

Rating

Unit

TOSHIBA

2-3R1F

−30

±20

−10

−40

DSS

Weight: 0.035 g (typ.)

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Circuit Configuration

Pulse (Note 1)

Drain power dissipation (t = 10 s)

(Note 2a)

1.1

0.6

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy

(Note 3)

Avalanche current

−10

0.11

Repetitive avalanche energy

(Note 2a) (Note 4)

Channel temperature

150

°C

Storage temperature range

−55 to 150

stg

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6 7

中文翻译

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与TPCS8105_07相关器件

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TPCS8201	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
TPCS8203	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 20V V(BR)DSS \| 6A I(D) \| SO
TPCS8204	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8204(TE12L)	TOSHIBA	获取价格	TRANS MOSFET N-CH
TPCS8204_04	TOSHIBA	获取价格	Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type
TPCS8204_07	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPCS8205	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205(TE12L)	TOSHIBA	获取价格	MOSFET 2N-CH 20V 5A 8-TSSOP
TPCS8205_07	TOSHIBA	获取价格	Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
TPCS8208	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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