生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.75 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPCS8211_07 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications | |
TPCS8212 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type (U-MOSIII) | |
TPCS8212_07 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications | |
TPCS8213 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications | |
TPCS8214 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications | |
TPCS8214_09 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications | |
TPCS8302 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications | |
TPCS8302_07 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications | |
TPCS8302_09 | TOSHIBA |
获取价格 |
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications | |
TPCS8303 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) |