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TPCS8212_07 PDF预览

TPCS8212_07

更新时间： 2022-04-23 23:00:11
品牌 Logo 应用领域
东芝 - TOSHIBA 电池
页数 文件大小 规格书
7页 190K
描述
Lithium Ion Battery Applications

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中文翻译

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TPCS8212_07 数据手册

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TPCS8212  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
TPCS8212  
Lithium Ion Battery Applications  
Unit: mm  
•
•
•
•
•
•
Small footprint due to small and thin package  
Low drain-source ON resistance: R = 16 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 11 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 20 V)  
DSS  
DS  
Enhancement mode: V = 0.5~1.2 V (V  
th  
= 10 V, I = 200 μA)  
D
DS  
Common drain  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
20  
±12  
6
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
(Note 1)  
I
D
JEDEC  
JEITA  
―
―
Drain current  
A
Pulse  
I
24  
DP  
Single-device  
operation (Note 3a)  
P
P
P
P
1.1  
0.75  
0.6  
D (1)  
TOSHIBA  
2-3R1E  
Drain power  
dissipation  
(t = 10 s)  
Single-device value  
at dual operation  
(Note 3b)  
Weight: 0.035 g (typ.)  
(Note 2a)  
D (2)  
D (1)  
D (2)  
W
Single-device  
operation (Note 3a)  
Drain power  
dissipation  
(t = 10 s)  
Circuit Configuration  
Single-device value  
at dual operation  
(Note 3b)  
8
7
6
5
0.35  
(Note 2b)  
Single pulse avalanche energy  
(Note 4)  
E
46.8  
6
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
(Note 2a, 3b, 5)  
E
0.075  
mJ  
AR  
Channel temperature  
T
150  
°C  
°C  
ch  
1
2
3
4
Storage temperature range  
T
−55~150  
stg  
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2007-01-16  
1234567

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