Datasheet > TPCS8302_09

TPCS8302_09

更新时间： 2024-09-21 08:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		电池电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	200K
描述
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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中文翻译

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TPCS8302_09 数据手册

TPCS8302

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPCS8302

Lithium Ion Battery Applications

Unit: mm

Notebook PC Applications

Portable Equipment Applications

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 22 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 12 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −20 V)

DSS

Enhancement mode: V = −0.5~−1.2 V (V

= −10 V, I = −200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−20

±12

−5

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

JEDEC

JEITA

―

GSS

(Note 1)

Drain current

Pulse

−20

TOSHIBA

2-3R1E

Single-device

operation (Note 3a)

1.1

0.75

0.6

D (1)

Drain power

dissipation

(t = 10 s)

Weight: 0.035 g (typ.)

Single-device value

at dual operation

(Note 3b)

(Note 2a)

D (2)

D (1)

D (2)

Single-device

operation (Note 3a)

Circuit Configuration

Drain power

dissipation

(t = 10 s)

Single-device value

at dual operation

(Note 3b)

0.35

(Note 2b)

Single pulse avalanche energy

(Note 4)

32.5

Avalanche current

−5

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.075

Channel temperature

150

°C

Storage temperature range

−55 to 150

stg

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6 7

中文翻译

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与TPCS8302_09相关器件

型号	品牌	获取价格	描述	数据表
TPCS8303	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPCS8303_07	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
TPCS8303_09	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
TPCT4201	TOSHIBA	获取价格	LITHIUM ION BATTERY APPLICATIONS
TPCT4202	NSC	获取价格	Field effect Transistor Silicon N Channel MOS Type(U-MOS)
TPCT4204	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS Type
TPD03-6G18S	TRANSCOM	获取价格	Splitter
TPD050503D	TOPPOWER	获取价格	1W Isolated Twin Output DC/DC Converters
TPD050503D-2W	TOPPOWER	获取价格	2W 3KVDC Isolated Twin Output DC/DC Converters
TPD050503D-W5	TOPPOWER	获取价格	0.5W Isolated Twin Output DC/DC Converters

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