TPCS8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCS8303
Lithium Ion Battery Applications
Notebook PC Applications
Unit: mm
Portable Machines and Tools
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R = 15 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 18 S (typ.)
fs
Low leakage current: I
= −10 μA (max) (V
= −20 V)
DSS
DS
Enhancement mode: V = −0.45~−1.2 V (V
= −10 V, I = −200 μA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
−20
−20
±12
−5
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
JEDEC
JEITA
―
―
V
GSS
DC
(Note 1)
(Note 1)
I
D
Drain current
A
Pulse
I
−20
TOSHIBA
2-3R1E
DP
Single-device
operation (Note 3a)
Weight: 0.035 g (typ.)
P
P
P
P
1.1
0.75
0.6
D (1)
Drain power
dissipation
(t = 10 s)
W
Single-device value
at dual operation
(Note 3b)
(Note 2a)
D (2)
D (1)
D (2)
Circuit Configuration
Single-device
operation (Note 3a)
Drain power
dissipation
(t = 10 s)
8
7
6
5
W
Single-device value
at dual operation
(Note 3b)
0.35
(Note 2b)
Single pulse avalanche energy
(Note 4)
E
16.3
mJ
A
AS
Avalanche current
I
−5
AR
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
0.075
mJ
AR
1
2
3
4
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
−55~150
stg
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-16