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TPCS8213

更新时间： 2024-02-15 10:36:37
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体电池小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 209K
描述
Lithium Ion Battery Applications

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TPCS8213 技术参数

生命周期：Transferred包装说明：2-3R1E, 8 PIN
针数：8Reach Compliance Code：unknown
风险等级：5.38Is Samacsys：N
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.013 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPCS8213 数据手册

 浏览型号TPCS8213的Datasheet PDF文件第2页浏览型号TPCS8213的Datasheet PDF文件第3页浏览型号TPCS8213的Datasheet PDF文件第4页浏览型号TPCS8213的Datasheet PDF文件第5页浏览型号TPCS8213的Datasheet PDF文件第6页浏览型号TPCS8213的Datasheet PDF文件第7页 
TPCS8213  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)  
TPCS8213  
Lithium Ion Battery Applications  
Unit: mm  
•
•
•
•
•
•
Small footprint due to a small and thin package  
Low drain-source ON-resistance: R = 8.4 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 13 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 20 V)  
DSS  
DS  
Enhancement-mode: V = 0.5~1.4 V (V  
th  
= 10 V, I = 200 μA)  
D
DS  
Common drain  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
20  
±12  
6
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
(Note 1)  
I
D
Drain current  
A
Pulse  
I
24  
DP  
Single-device  
operation (Note 3a)  
P
P
P
P
1.1  
0.75  
0.6  
Drain power  
dissipation  
(t = 10 s)  
D (1)  
JEDEC  
JEITA  
⎯
⎯
W
Single-device value  
at dual operation  
(Note 3b)  
D (2)  
D (1)  
D (2)  
(Note 2a)  
TOSHIBA  
2-3R1E  
Single-device  
operation (Note 3a)  
Weight: 0.035 g (typ.)  
Drain power  
dissipation  
(t = 10 s)  
W
Single-device value  
at dual operation  
(Note 3b)  
Circuit Configuration  
0.35  
(Note 2b)  
8
7
6
5
Single-pulse avalanche energy  
(Note 4)  
E
9.4  
6
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
(Note 2a, 3b, 5)  
E
0.075  
mJ  
AR  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
−55~150  
stg  
1
2
3
4
Note: For Notes 1 to 5, see the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
WARNING  
【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】  
Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not  
noncombustible.Use a unit, for example PTC Thermistor, which can shut off the power supply if a  
short-circuit occurs. If the power supply is not shut off on the occurring short-circuit,a large  
short-circuit current will flow continuously, which may cause the device to catch fire or smoke.  
1
2007-01-16  
1234567

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