Datasheet > TPCS8210_07

TPCS8210_07

更新时间： 2024-10-01 03:26:47

品牌	Logo	应用领域
东芝 - TOSHIBA		电池
页数	文件大小	规格书
7页	198K
描述
Lithium Ion Battery Applications

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中文翻译

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TPCS8210_07 数据手册

TPCS8210

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPCS8210

Lithium Ion Battery Applications

Unit: mm

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 19 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 9.2 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 20 V)

DSS

Enhancement mode: V = 0.5~1.2 V (V

= 10 V, I = 200 μA)

Common drain

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±12

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

JEDEC

JEITA

―

Drain current

Pulse

Single-device

operation (Note 3a)

1.1

0.75

0.6

D (1)

TOSHIBA

2-3R1E

Drain power

dissipation

(t = 10 s)

Single-device value

at dual operation

(Note 3b)

Weight: 0.035 g (typ.)

(Note 2a)

D (2)

D (1)

D (2)

Single-device

operation (Note 3a)

Drain power

dissipation

(t = 10 s)

Circuit Configuration

Single-device value

at dual operation

(Note 3b)

0.35

(Note 2b)

Single pulse avalanche energy

(Note 4)

32.5

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.075

Channel temperature

150

°C

Storage temperature range

−55~150

stg

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2007-01-16

12 3 4 5 6 7

中文翻译

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与TPCS8210_07相关器件

型号	品牌	获取价格	描述	数据表
TPCS8211	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8211(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
TPCS8211_07	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPCS8212	TOSHIBA	获取价格	Silicon N Channel MOS Type (U-MOSIII)
TPCS8212_07	TOSHIBA	获取价格	Lithium Ion Battery Applications
TPCS8213	TOSHIBA	获取价格	Lithium Ion Battery Applications
TPCS8214	TOSHIBA	获取价格	Lithium Ion Battery Applications
TPCS8214_09	TOSHIBA	获取价格	Lithium Ion Battery Applications
TPCS8302	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TPCS8302_07	TOSHIBA	获取价格	Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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