Datasheet > TPCS8204_04

TPCS8204_04

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体电池晶体管场效应晶体管
页数	文件大小	规格书
7页	200K
描述
Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type

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TPCS8204_04 数据手册

TPCS8204

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPCS8204

Lithium Ion Battery Applications

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 13 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 15 S (typ.)

Low leakage current: I

= 10 µA (max) (V

= 20 V)

DSS

Enhancement mode: V = 0.5~1.2 V (V

= 10 V, I = 200 µA)

Maximum Ratings

(Ta 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±12

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

JEDEC

JEITA

―

Drain current

Pulse

Single-device

operation (Note 3a)

1.1

0.75

0.6

Drain power

dissipation

(t = 10 s)

D (1)

TOSHIBA

2-3R1E

Single-device value

at dual operation

(Note 3b)

Weight: 0.035 g (typ.)

D (2)

D (1)

D (2)

(Note 2a)

Single-device

operation (Note 3a)

Circuit Configuration

Drain power

dissipation

(t = 10 s)

Single-device value

at dual operation

(Note 3b)

0.35

(Note 2b)

Single pulse avalanche energy

(Note 4)

46.8

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

0.075

(Note 2a, 3b, 5)

Channel temperature

150

°C

Storage temperature range

stg

−55~150

Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2004-07-06

12 3 4 5 6 7

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