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TPCS8008-H_09 PDF预览

TPCS8008-H_09

更新时间： 2024-11-24 05:53:19
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关
页数 文件大小 规格书
7页 222K
描述
High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications

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TPCS8008-H_09 数据手册

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TPCS8008-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)  
TPCS8008-H  
High-Speed Switching Applications  
Unit: mm  
Switching Regulator Applications  
DC-DC Converter Applications  
•
•
•
•
Low drain-source ON-resistance: R  
= 0.48 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 1.8 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 250 V)  
DSS  
DS  
Enhancement model: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.2.3.  
4
Source  
Gate  
Absolute Maximum Ratings (Ta = 25°C)  
5.6.7.8 Drain  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
JEDEC  
―
―
V
250  
250  
±20  
1.7  
V
V
V
DSS  
JEITA  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
TOSHIBA  
2-3R1F  
V
GSS  
Weight: 0.036 g (typ.)  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
6.8  
DP  
Drain power dissipation (t = 10 s)  
(Note 2a)  
Circuit Configuration  
P
1.5  
0.6  
D
D
W
8
7
6
5
Drain power dissipation (t = 10 s)  
(Note 2b)  
P
Single-pulse avalanche energy(Note3)  
Avalanche current  
E
1.7  
1.7  
mJ  
A
AS  
I
AR  
Repetitive avalanche energy  
(Note2a, Note 4)  
E
0.15  
mJ  
AR  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
−55 to 150  
stg  
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-12-09  
1234567

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