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TPCS8104_07 PDF预览

TPCS8104_07

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
东芝 - TOSHIBA 电池电脑便携式便携式设备PC
页数 文件大小 规格书
7页 248K
描述
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

TPCS8104_07 数据手册

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TPCS8104  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)  
TPCS8104  
Lithium Ion Battery Applications  
Notebook PC Applications  
Unit: mm  
Portable Equipment Applications  
Small footprint due to small and thin package  
Low drain-source ON resistance: R = 8.1 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 23 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 0.8 to 2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
JEITA  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
±20  
11  
44  
V
V
V
DSS  
TOSHIBA  
2-3R1B  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
Weight: 0.035 g (typ.)  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
DP  
Circuit Configuration  
Drain power dissipation (t = 10 s)  
(Note 2a)  
P
1.1  
0.6  
W
W
D
D
8
7
6
5
Drain power dissipation (t = 10 s)  
(Note 2b)  
P
Single pulse avalanche energy  
(Note 3)  
E
31.5  
11  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.11  
mJ  
AR  
(Note 2a) (Note 4)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
55 to 150  
stg  
1
2
3
4
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-16  

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