TPCS8104
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCS8104
Lithium Ion Battery Applications
Notebook PC Applications
Unit: mm
Portable Equipment Applications
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R = 8.1 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 23 S (typ.)
fs
Low leakage current: I
= −10 μA (max) (V
= −30 V)
DSS
DS
Enhancement mode: V = −0.8 to −2.0 V (V
= −10 V, I = −1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
JEITA
―
―
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
−30
−30
±20
−11
−44
V
V
V
DSS
TOSHIBA
2-3R1B
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
Weight: 0.035 g (typ.)
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
DP
Circuit Configuration
Drain power dissipation (t = 10 s)
(Note 2a)
P
1.1
0.6
W
W
D
D
8
7
6
5
Drain power dissipation (t = 10 s)
(Note 2b)
P
Single pulse avalanche energy
(Note 3)
E
31.5
−11
mJ
A
AS
Avalanche current
I
AR
Repetitive avalanche energy
E
0.11
mJ
AR
(Note 2a) (Note 4)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
−55 to 150
stg
1
2
3
4
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-16