TPCS8102

更新时间： 2024-11-23 21:54:51

品牌	Logo	应用领域
东芝 - TOSHIBA		电池电脑便携式便携式设备 PC
页数	文件大小	规格书
7页	394K
描述
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs

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中文翻译

获取价格

数据手册

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TPCS8102 数据手册

TPCS8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

TPCS8102

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Unit: mm

ꢀ

Small footprint due to small and thin package

Low drain-source ON resistance: R = 16 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 17 S (typ.)

Low leakage current: I

= −10 µA (max) (V

Enhancement-mode: V = −0.5~−1.2 V (V

= −20 V)

= −10 V, I = −200 µA)

DSS

th DS

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

−20

±12

−6

Drain-source voltage

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

JEDEC

JEITA

―

Drain current

Pulse (Note 1)

−24

Drain power dissipation

(t = 10 s)

(Note 2a)

1.5

0.6

TOSHIBA

2-3R1B

(t = 10 s)

(Note 2b)

Weight: 0.035 g (typ.)

Single pulse avalanche energy

(Note 3)

46.8

−6

Avalanche current

Circuit Configuration

Repetitive avalanche energy

0.15

(Note 2a, Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2002-05-17

12 3 4 5 6 7

中文翻译

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