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TPCS8102 PDF预览

TPCS8102

更新时间: 2024-09-30 21:54:51
品牌 Logo 应用领域
东芝 - TOSHIBA 电池电脑便携式便携式设备PC
页数 文件大小 规格书
7页 394K
描述
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs

TPCS8102 数据手册

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TPCS8102  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)  
TPCS8102  
Lithium Ion Battery Applications  
Portable Equipment Applications  
Notebook PCs  
Unit: mm  
Small footprint due to small and thin package  
Low drain-source ON resistance: R = 16 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 17 S (typ.)  
fs  
Low leakage current: I  
= 10 µA (max) (V  
Enhancement-mode: V = 0.5~1.2 V (V  
= 20 V)  
DS  
= 10 V, I = 200 µA)  
DSS  
th DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
V
20  
20  
±12  
6  
V
V
V
Drain-source voltage  
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 k)  
DGR  
GS  
V
GSS  
DC  
(Note 1)  
I
D
JEDEC  
JEITA  
Drain current  
A
Pulse (Note 1)  
I
24  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
P
1.5  
0.6  
W
W
D
D
TOSHIBA  
2-3R1B  
(t = 10 s)  
(Note 2b)  
P
Weight: 0.035 g (typ.)  
Single pulse avalanche energy  
(Note 3)  
E
I
46.8  
6  
mJ  
A
AS  
Avalanche current  
Circuit Configuration  
AR  
Repetitive avalanche energy  
E
0.15  
mJ  
AR  
(Note 2a, Note 4)  
T
150  
°C  
°C  
Channel temperature  
ch  
T
55 to 150  
Storage temperature range  
stg  
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the  
next page.  
This transistor is an electrostatic sensitive device. Please handle with  
caution.  
1
2002-05-17  

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