Datasheet > TPCS8104(TE12L,Q)

TPCS8104(TE12L,Q)

更新时间： 2024-10-02 03:25:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	246K
描述
MOSFET P-CH 30V 11A 2-3R1B

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TPCS8104

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPCS8104

Lithium Ion Battery Applications

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 8.1 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 23 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −30 V)

DSS

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

JEDEC

JEITA

―

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−11

−44

DSS

TOSHIBA

2-3R1B

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

Weight: 0.035 g (typ.)

GSS

(Note 1)

Drain current

Pulse (Note 1)

Circuit Configuration

Drain power dissipation (t = 10 s)

(Note 2a)

1.1

0.6

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy

(Note 3)

31.5

−11

Avalanche current

Repetitive avalanche energy

0.11

(Note 2a) (Note 4)

Channel temperature

150

°C

Storage temperature range

−55 to 150

stg

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6 7

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