Datasheet > TPCS8101(TE12L)

TPCS8101(TE12L)

更新时间： 2024-10-01 15:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	275K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,6A I(D),SO

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中文翻译

获取价格

技术参数
数据手册

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TPCS8101(TE12L) 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.81	配置：	Single
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.5 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TPCS8101(TE12L) 数据手册

TPCS8101

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

TPCS8101

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Unit: mm

l Small footprint due to small and thin package

l Low drain-source ON resistance: R = 15 mΩ (typ.)

DS (ON)

l High forward transfer admittance: |Y | = 12 S (typ.)

l Low leakage current: I

= −10 µA (max) (V

l Enhancement-mode: V = −0.8~−2.0 V (V

= −30 V)

DSS

= −10 V, I = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−6

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

JEDEC

JEITA

―

Drain current

Pulse (Note 1)

−24

Drain power dissipation

(t = 10 s)

(Note 2a)

1.5

0.6

TOSHIBA

2-3R1B

(t = 10 s)

(Note 2b)

Weight: 0.035 g (typ.)

Single pulse avalanche energy

(Note 3)

46.8

−6

Avalanche current

Circuit Configuration

Repetitive avalanche energy

0.15

(Note 2a, Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2002-05-07

12 3 4 5 6 7

中文翻译

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