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TPCP8507(TE85L,F) PDF预览

TPCP8507(TE85L,F)

更新时间: 2024-02-06 02:21:26
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 171K
描述
TRANSISTOR,BJT,NPN,120V V(BR)CEO,1A I(C),TSOP

TPCP8507(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):1 A
配置:Single最小直流电流增益 (hFE):120
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):3 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

TPCP8507(TE85L,F) 数据手册

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TPCP8507  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
TPCP8507  
High-Speed Switching Applications  
Unit: mm  
DC/DC Converters  
0.33±0.05  
A
M
0.05  
5
8
High DC current gain: hFE = 120~300 (IC = 0.1 A)  
Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)  
High-speed switching: tf = 0.2 μs (typ.)  
0.475  
1
4
B
B
M
0.05  
0.65  
2.9±0.1  
Absolute Maximum Ratings (Ta = 25°C)  
A
0.8±0.05  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
V
180  
150  
V
V
CBO  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-emitter voltage  
V
CEX  
+0.13  
-0.12  
1.12  
1.12  
V
V
120  
V
CEO  
+0.13  
-0.12  
7
V
EBO  
DC (Note 1)  
I
1.0  
A
C
+0.1  
0.28  
Collector current  
-0.11  
Pulsed (Note 1)  
I
2.0  
A
CP  
1. Collector 5. Emitter  
2. Collector 6. Collector  
3. Collector 7. Collector  
Base current  
I
0.1  
A
B
t = 10 s  
DC  
3.00  
1.25  
150  
W
W
°C  
°C  
Collector power  
dissipation  
P
(Note 2)  
C
4. Base  
8. Collector  
Junction temperature  
T
j
JEDEC  
Storage temperature range  
T
55~150  
stg  
JEITA  
Note 1: Ensure that the channel temperature does not exceed 150°C  
during use of the device.  
TOSHIBA  
2-3V1A  
Weight: 0.017 g (typ.)  
Note 2: Mounted on an FR4 board (glass epoxy; 1.6 mm thick; Cu area,  
645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-13  

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