Datasheet > TPCP8602(TE85L,F)

TPCP8602(TE85L,F)

更新时间： 2024-11-05 15:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		PC
页数	文件大小	规格书
5页	201K
描述
TPCP8602(TE85L,F)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPCP8602(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.58	Base Number Matches：	1

TPCP8602(TE85L,F) 数据手册

浏览型号TPCP8602(TE85L,F)的Datasheet PDF文件第2页

浏览型号TPCP8602(TE85L,F)的Datasheet PDF文件第3页

TPCP8602

TOSHIBA Transistor Silicon PNP Epitaxial Type

TPCP8602

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Flash Applications

0.33±0.05

0.05

•

High DC current gain: h

= 200 to 500 (I = −0.3 A)

FE C

Low collector-emitter saturation: V

= −0.2 V (max)

CE (sat)

0.475

High-speed switching: t = 90 ns (typ.)

0.05

0.65

2.9±0.1

Absolute Maximum Ratings (Ta = 25°C)

0.8±0.05

0.025

+0.1

0.28

0.17±0.02

-0.11

Characteristic

Collector-base voltage

Symbol

Rating

Unit

+0.13

-0.12

CBO

CEO

EBO

−50

−7

1.12

Collector-emitter voltage

Emitter-base voltage

+0.13

-0.12

+0.1

0.28

-0.11

5.Emitter

1.Collector

2.Collector

3.Collector

4.Base

DC (Note 1)

−2.5

−4.0

6.Collector

7.Collector

8.Collector

Collector current

Pulse (Note 1 )

Base current

−0.25

JEDEC

―

t = 10s

3.0

1.25

Collector power

dissipation (t = 10s)

JEITA

(Note 2)

TOSHIBA

2-3V1A

Junction temperature

150

°C

Weight: 0.017 g (typ.)

Storage temperature range

−55 to 150

stg

Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.

Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-13

12 3 4 5

中文翻译

下载PDF

与TPCP8602(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
TPCP8603	TOSHIBA	获取价格	High-Speed Switching Applications DC/DC Converters Strobe Applications
TPCP8604	TOSHIBA	获取价格	TRANSISTOR 0.3 A, 400 V, NPN, Si, POWER TRANSISTOR, 2-3V1D, 8 PIN, BIP General Purpose Pow
TPCP8604(TE85L)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,300MA I(C),TSOP
TPCP8604(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,300MA I(C),TSOP
TPCP8605	TOSHIBA	获取价格	PNP Bipolar Transistor, -50 V, -5 A, PS-8
TPCP8606	TOSHIBA	获取价格	PNP Bipolar Transistor, -80 V, -4 A, PS-8
TPCP8607	TOSHIBA	获取价格	PNP Bipolar Transistor, -120 V, -2.5 A, PS-8
TPCP8608	TOSHIBA	获取价格	PNP Bipolar Transistor, -50 V, -3 A, PS-8
TPCP8701	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8901	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)