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TPCP8602(TE85L,F) PDF预览

TPCP8602(TE85L,F)

更新时间: 2024-01-20 05:11:45
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
5页 201K
描述
TPCP8602(TE85L,F)

TPCP8602(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.58Base Number Matches:1

TPCP8602(TE85L,F) 数据手册

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TPCP8602  
TOSHIBA Transistor Silicon PNP Epitaxial Type  
TPCP8602  
High-Speed Switching Applications  
Unit: mm  
DC-DC Converter Applications  
Strobe Flash Applications  
0.33±0.05  
A
M
0.05  
5
8
High DC current gain: h  
= 200 to 500 (I = 0.3 A)  
FE C  
Low collector-emitter saturation: V  
= 0.2 V (max)  
CE (sat)  
0.475  
1
4
High-speed switching: t = 90 ns (typ.)  
f
B
B
M
0.05  
0.65  
2.9±0.1  
A
Absolute Maximum Ratings (Ta = 25°C)  
0.8±0.05  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
+0.13  
-0.12  
V
CBO  
V
CEO  
V
EBO  
50  
50  
7  
V
V
V
1.12  
1.12  
Collector-emitter voltage  
Emitter-base voltage  
+0.13  
-0.12  
+0.1  
0.28  
-0.11  
5.Emitter  
1.Collector  
2.Collector  
3.Collector  
4.Base  
DC (Note 1)  
I
2.5  
4.0  
C
6.Collector  
7.Collector  
8.Collector  
Collector current  
A
A
Pulse (Note 1 )  
I
CP  
Base current  
I
0.25  
B
JEDEC  
t = 10s  
DC  
3.0  
1.25  
Collector power  
dissipation (t = 10s)  
JEITA  
P
(Note 2)  
W
C
TOSHIBA  
2-3V1A  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.017 g (typ.)  
Storage temperature range  
T
55 to 150  
stg  
Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.  
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-13  

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