Datasheet > TPCP8606

TPCP8606

更新时间： 2024-11-06 14:56:55

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TPCP8606 数据手册

TPCP8606

Bipolar Transistors Silicon PNP Epitaxial Type

TPCP8606

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A)

(2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A)

(3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A)

3. Packaging and Internal Circuit

1. Emitter

2. Emitter

3. Emitter

4. Base

5. Collector

6. Collector

7. Collector

8. Collector

PS-8

Start of commercial production

2023-01

2023-01-16

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

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