Datasheet > TPCP8604(TE85L)

TPCP8604(TE85L)

更新时间： 2024-11-06 10:11:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	172K
描述
TRANSISTOR,BJT,NPN,400V V(BR)CEO,300MA I(C),TSOP

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技术参数
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TPCP8604(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	最大集电极电流 (IC)：	0.3 A
配置：	Single	最小直流电流增益 (hFE)：	140
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	2.2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

TPCP8604(TE85L) 数据手册

TPCP8604

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

TPCP8604

High-Voltage Switching Applications

Unit: mm

0.33±0.05

High breakdown voltage: V

= −400 V

CEO

0.05

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

0.475

CBO

CEO

EBO

−400

−7

0.05

0.65

2.9±0.1

Collector-emitter voltage

Emitter-base voltage

0.8±0.05

DC (Note 1)

−0.3

0.025

+0.1

0.28

Collector current

Base current

0.17±0.02

-0.11

Pulse(Note 1)

−1

+0.13

−0.25

−2.2

1.12

-0.12

t=10s

Collector power

dissipation

+0.13

-0.12

(Note 2)

−1.1

+0.1

0.28

Junction temperature

−150

−55 to 150

°C

-0.11

1. NC

5. NC

Storage temperature range

stg

2. COLLECTOR

3. COLLECTOR

4. COLLECTOR

6. EMITTER

7. NC

8. BASE

Figure1. Circuit Configuration

Figure2.Marking(Note 3)

JEDEC

JEITA

―

TOSHIBA

2-3V1D

Type

8604

Weight: 0.05 g (typ.)

※

Lot No.

(Weekly code)

Note 1 : Please use devices on condition that the junction temperature is below 150℃.

Note 2 : Mounted on FR4 board( glass epoxy, 1.6mm thick, Cu area: 645mm²)

Note 3 :●on lower left of the marking indicates Pin 1.

※ Weekly code: (three digits)

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

Note 4 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-06-07

12 3 4 5

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与TPCP8604(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
TPCP8604(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,400V V(BR)CEO,300MA I(C),TSOP
TPCP8605	TOSHIBA	获取价格	PNP Bipolar Transistor, -50 V, -5 A, PS-8
TPCP8606	TOSHIBA	获取价格	PNP Bipolar Transistor, -80 V, -4 A, PS-8
TPCP8607	TOSHIBA	获取价格	PNP Bipolar Transistor, -120 V, -2.5 A, PS-8
TPCP8608	TOSHIBA	获取价格	PNP Bipolar Transistor, -50 V, -3 A, PS-8
TPCP8701	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8901	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
TPCP8901(TE85L)	TOSHIBA	获取价格	TRANSISTOR,BJT,PAIR,COMPLEMENTARY,50V V(BR)CEO,800MA I(C),TSOP
TPCP8902	TOSHIBA	获取价格	TRANSISTOR 2 A, 30 V, 2 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, PS-8, 8 PIN, BIP Gener
TPCP8902(TE85L)	TOSHIBA	获取价格	TRANSISTOR,BJT,PAIR,COMPLEMENTARY,30V V(BR)CEO,2A I(C),TSOP

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