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TPCP8AA1 PDF预览

TPCP8AA1

更新时间: 2024-11-20 20:03:19
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管晶体管
页数 文件大小 规格书
4页 151K
描述
TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PS-8, FET General Purpose Small Signal

TPCP8AA1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.6 A
最大漏极电流 (ID):1.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:100 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

TPCP8AA1 数据手册

 浏览型号TPCP8AA1的Datasheet PDF文件第2页浏览型号TPCP8AA1的Datasheet PDF文件第3页浏览型号TPCP8AA1的Datasheet PDF文件第4页 
TPCP8AA1  
Silicon N Channel MOS Type (U-MOS) / Silicon Epitaxial Schottky Barrier Diode  
Preliminary  
TPCP8AA1  
単位: mm  
DC-DC Converter  
Combined Nch MOSFET and Schottky Diode into one Package.  
Low R and Low V  
DS (ON)  
F
Maximum Ratings (Ta = 25°C) MOSFET  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
20  
±12  
1.6  
3.2  
1.0  
150  
V
V
DS  
Gate-Source voltage  
V
GSS  
1:Anode  
2:N/C  
3:Source  
4:Gate  
5,6:Drain  
7,8:Cathode  
DC  
Pulse  
I
D
Drain current  
A
I
(Note 2)  
(Note 1)  
DP  
Drain power dissipation  
Channel temperature  
P
W
D
T
ch  
°C  
JEDEC  
Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE  
JEITA  
TOSHIBA  
PS8  
Characteristics  
Symbol  
Rating  
Unit  
Weight: mg (typ)  
Maximum (peak) reverse voltage  
Reverse voltage  
V
30  
25  
V
V
A
RM  
Making  
V
R
Average forward current  
I
0.7  
O
Peak one cycle surge forward current  
(non-repetitive)  
4 (50 Hz)  
I
A
FSM  
8AA1  
Junction temperature  
T
j
125  
°C  
Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON  
Characteristics  
Storage temperature  
Symbol  
Rating  
55~125  
40~100  
Unit  
°C  
Equivalent  
T
stg  
Ci  
it  
T
opr  
Operating temperature  
°C  
(Note 3)  
Note 1: Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)  
Note 2: The pulse width limited by max channel temperature.  
Note 3: Operating temperature limited by max channel temperature and max junction temperature.  
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the  
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use  
containers and other objects that are made of anti-static materials.  
The Channel-to-Ambient thermal resistance R  
th (ch-a)  
and the drain power dissipation P vary according to  
D
the board material, board area, board thickness and pad area. When using this device, please take heat  
dissipation fully into account.  
1
2004-03-18  

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