是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
Reach Compliance Code: | unknown | 风险等级: | 5.79 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-F8 |
元件数量: | 2 | 端子数量: | 8 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1.77 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPCP8901 | TOSHIBA |
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TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) | |
TPCP8901(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,COMPLEMENTARY,50V V(BR)CEO,800MA I(C),TSOP | |
TPCP8902 | TOSHIBA |
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TRANSISTOR 2 A, 30 V, 2 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, PS-8, 8 PIN, BIP Gener | |
TPCP8902(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PAIR,COMPLEMENTARY,30V V(BR)CEO,2A I(C),TSOP | |
TPCP8902(TE85L,F,M | TOSHIBA |
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Power Bipolar Transistor | |
TPCP8A05-H | TOSHIBA |
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TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3V1K, 8 PIN, FET General | |
TPCP8A05-H(TE85L) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSOP | |
TPCP8AA1 | TOSHIBA |
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TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PS-8, FET General Purpose S | |
TPCP8BA1 | TOSHIBA |
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TRANSISTOR 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
TPCP8F01 | TOSHIBA |
获取价格 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silic |