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TPCP8701 PDF预览

TPCP8701

更新时间: 2024-11-24 12:53:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 217K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type

TPCP8701 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code:unknown风险等级:5.79
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-F8
元件数量:2端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):1.77 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPCP8701 数据手册

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TPCP8701  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
TPCP8701  
Portable Equipment Applications  
Unit: mm  
Switching Applications  
0.33±0.05  
A
M
0.05  
8
5
Inverter Lighting Applications  
Small footprint due to small and thin package  
High DC current gain : h = 400 to 1000 (I = 0.3 A)  
FE  
Low collector-emitter saturation : V  
C
0.475  
1
4
= 0.14 V (max)  
CE (sat)  
High-speed switching : t = 120 ns (typ.)  
B
B
M
0.05  
0.65  
f
2.9±0.1  
A
0.8±0.05  
Maximum Ratings  
Characteristics  
(Ta = 25°C)  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Symbol  
Rating  
100  
Unit  
V
+0.13  
-0.12  
1.12  
1.12  
+0.13  
-0.12  
Collector-base voltage  
V
CBO  
+0.1  
0.28  
V
80  
50  
V
V
-0.11  
CEX  
5.Collector2  
6.Collector2  
7.Collector1  
8.Collector1  
1.Emitter1  
Collector-emitter voltage  
Emitter-base voltage  
2.Base1  
3.Emitter2  
4.Base2  
V
V
CEO  
JEDEC  
7
V
A
EBO  
JEITA  
DC (Note 1)  
I
3.0  
5.0  
C
Collector current  
Base current  
TOSHIBA  
2-3V1C  
Pulse (Note 1 )  
I
CP  
Weight: 0.017 g (typ.)  
I
B
300  
mA  
Single-device  
operation  
Figure 1.  
Circuit configuration  
(Top View)  
1.77  
Collector power  
dissipation (t = 10s)  
Pc (Note 2)  
Pc (Note 2)  
W
W
Single-device  
value at dual  
operation  
0.95  
0.94  
0.54  
8ꢀꢀ7 ꢀ6 ꢀ5  
Single-device  
operation  
Collector power  
dissipation (DC)  
Single-device  
value at dual  
operation  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
1ꢀ 2ꢀ 3ꢀ 4  
Figure 2. Marking  
(Note 3)  
8ꢀ 7 6 ꢀ 5  
Note 1: Please use devices on condition that the junction temperature is  
below 150°C.  
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 3: on lower left on the marking indicates Pin 1.  
Type  
Weekly code: (Three digits)  
8701  
Week of manufacture  
(01 for first week of year, continues up to 52 or 53)  
1ꢀ 2ꢀ 3  
4
Year of manufacture  
Lot No.  
(One low-order digits of calendar year)  
(Weekly code)  
1
2004-05-11  

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