5秒后页面跳转
捷配首页

Datasheet > TPCP8902(TE85L,F,M
TPCP8902(TE85L,F,M PDF预览

TPCP8902(TE85L,F,M

更新时间： 2024-11-05 16:35:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 244K
描述
Power Bipolar Transistor

阅读下载

中文翻译

获取价格

TPCP8902(TE85L,F,M 技术参数

生命周期：End Of Life包装说明：,
Reach Compliance Code：unknown风险等级：5.75
Base Number Matches：1

TPCP8902(TE85L,F,M 数据手册

 浏览型号TPCP8902(TE85L,F,M的Datasheet PDF文件第2页浏览型号TPCP8902(TE85L,F,M的Datasheet PDF文件第3页浏览型号TPCP8902(TE85L,F,M的Datasheet PDF文件第4页浏览型号TPCP8902(TE85L,F,M的Datasheet PDF文件第5页浏览型号TPCP8902(TE85L,F,M的Datasheet PDF文件第6页浏览型号TPCP8902(TE85L,F,M的Datasheet PDF文件第7页 
TPCP8902  
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)  
TPCP8902  
Portable Equipment Applications  
Unit: mm  
Switching Applications  
0.33±0.05  
A
M
0.05  
5
8
•
•
Small footprint due to small and thin package  
High DC current gain : PNP  
: NPN  
h
= 200 to 500 (I = −0.2 A)  
C
FE  
FE  
h
= 200 to 500 (I = 0.2 A)  
C
0.475  
1
4
B
B
M
0.05  
•
•
Low collector-emitter saturation : PNP V  
: NPN V  
= −0.20 V (max)  
0.65  
CE (sat)  
CE (sat)  
2.9±0.1  
A
= 0.14 V (max)  
0.8±0.05  
High-speed switching : PNP t = 40 ns (typ.)  
f
S
0.025  
: NPN t = 45 ns (typ.)  
f
+0.1  
S
0.28  
0.17±0.02  
-0.11  
+0.13  
-0.12  
1.12  
1.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.13  
-0.12  
Rating  
Characteristics  
Collector-base voltage  
Symbol  
Unit  
+0.1  
0.28  
PNP  
−30  
−30  
−30  
−7  
NPN  
60  
-0.11  
1.Emitter1  
5.Collector2  
6.Collector2  
7.Collector1  
8.Collector1  
2.Base1  
3.Emitter2  
4.Base2  
V
V
V
V
A
CBO  
V
50  
CEX  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
JEDEC  
JEITA  
―
―
V
V
30  
7
TOSHIBA  
2-3V1C  
DC (Note 1)  
I
−2.0  
−8.0  
2.0  
8.0  
C
Pulse (Note 1 )  
I
CP  
Weight: 0.017 g (typ.)  
Base current  
I
−0.5  
0.5  
A
B
Single-device  
operation  
1.67  
Collector power  
dissipation (t = 10s)  
PC (Note 2)  
W
Single-device  
value at dual  
operation  
0.91  
0.89  
Single-device  
operation  
Collector power  
dissipation (DC)  
P
(Note 2)  
W
C
Single-device  
value at dual  
operation  
0.52  
150  
Junction temperature  
T
j
°C  
°C  
Storage temperature range  
T
−55 to 150  
stg  
Note 1: Please use devices on condition that the junction temperature is below 150℃.  
Icp=±8A (@ t≦100μs)  
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2006-08  
1
2013-11-01  
1234567

中文翻译

下载PDF

与TPCP8902(TE85L,F,M相关器件

型号 品牌 获取价格 描述 数据表
TPCP8A05-H TOSHIBA

获取价格

 		TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3V1K, 8 PIN, FET General
TPCP8A05-H(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSOP
TPCP8AA1 TOSHIBA

获取价格

 		TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PS-8, FET General Purpose S
TPCP8BA1 TOSHIBA

获取价格

 		TRANSISTOR 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S
TPCP8F01 TOSHIBA

获取价格

 		TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silic
TPCP8G01 TOSHIBA

获取价格

 		TRANSISTOR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3V1N, 8 PIN, BIP General Pur
TPCP8H01 TOSHIBA

获取价格

 		TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon
TPCP8H02 TOSHIBA

获取价格

 		TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon
TPCP8J01 TOSHIBA

获取价格

 		TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) ?Silicon NPN Epitaxial Type
TPCP8J01(TE85L,F) TOSHIBA

获取价格

 		MOSFET N/P-CH 32V 2-3V1G

与TPCP8902(TE85L,F,M相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证