TPCP8F01

更新时间： 2024-11-20 03:26:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	249K
描述
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type

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中文翻译

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TPCP8F01 数据手册

TPCP8F01

TOSHIBA Multi-chip Device

Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type

TPCP8F01

Unit: mm

○Swtching Applications

0.33±0.05

0.05

○Load Switch Applications

○Multi-chip discrete device; built-in PNP Transistor for

main switch and N-ch MOS FET for drive

0.475

0.05

•

High DC current gain: h

= 200 to 500 (I = −0.5 A)

0.65

FE C

2.9±0.1

(PNP Transistor)

= −0.19 V (max)

0.8±0.05

Low collector-emitter saturation: V

CE (sat)

0.025

(PNP Transistor)

High-speed switching: t = 40 ns (typ.) (PNP Transistor)

+0.1

0.28

0.17±0.02

-0.11

+0.13

1.12

-0.12

+0.13

-0.12

Absolute Maximum Ratings (Ta = 25°C)

Transistor

+0.1

0.28

1.Source

5.Emitter

6.Base

7.Gate

-0.11

2.Collector

3.Collector

4.Collector

Characteristics

Symbol

Rating

Unit

8.Drain

JEDEC

―

Collector-base voltage

−30

CBO

JEITA

Collector-emitter voltage

Emitter-base voltage

−20

−7

TOSHIBA

2-3V1B

CEO

Weight : 0.017g (Typ.)

EBO

−3.0

−5.0

−250

1.0

Collector current

Pulse

Base current

Collector power dissipation

Junction temperature

P (Note 1)

150

°C

MOS FET

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

DSS

±10

100

200

150

GSS

Drain current

°C

Pulse

Channel temperature

Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-13

12 3 4 5 6 7 8

中文翻译

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与TPCP8F01相关器件

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TPCP8G01	TOSHIBA	获取价格	TRANSISTOR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3V1N, 8 PIN, BIP General Pur
TPCP8H01	TOSHIBA	获取价格	TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon
TPCP8H02	TOSHIBA	获取价格	TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon
TPCP8J01	TOSHIBA	获取价格	TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) ?Silicon NPN Epitaxial Type
TPCP8J01(TE85L,F)	TOSHIBA	获取价格	MOSFET N/P-CH 32V 2-3V1G
TPCP8J01(TE85LFM)	TOSHIBA	获取价格	Power Field-Effect Transistor
TPCP8J01_07	TOSHIBA	获取价格	TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
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TPCP8R01	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
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