TPCP8603

更新时间： 2024-01-10 17:29:45

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器开关
页数	文件大小	规格书
5页	209K
描述
High-Speed Switching Applications DC/DC Converters Strobe Applications

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中文翻译

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TPCP8603 数据手册

TPCP8603

TOSHIBA Transistor Silicon PNP Epitaxial Type

TPCP8603

High-Speed Switching Applications

Unit: mm

DC/DC Converters

Strobe Applications

0.33±0.05

0.05

•

High DC current gain: h_FE= 120～300 (IC = −0.1 A)

Low collector-emitter saturation voltage: V_{CE (sat)}= −0.2 V (max)

High-speed switching: t_f= 120 ns (typ.)

0.475

0.05

0.65

2.9±0.1

0.8±0.05

Absolute Maximum Ratings (Ta = 25°C)

0.025

+0.1

-0.11

0.28

0.17±0.02

Characteristic

Collector-vase voltage

Symbol

Rating

Unit

−120

−7

+0.13

-0.12

CBO

1.12

Collector-emitter voltage

CEO

EBO

+0.13

-0.12

+0.1

DC (Note 1)

−1.0

−2.0

0.1

0.28

-0.11

Collector current

Pulsed (Note 1)

1. Collector 5. Emitter

2. Collector 6. Collector

3. Collector 7. Collector

Base current

t = 10 s

3.00

1.25

150

°C

Collector power

dissipation

(Note 2)

4. Base

8. Collector

Junction temperature

JEDEC

⎯

Storage temperature range

−55~150

stg

JEITA

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

TOSHIBA

2-3V1A

Weight: 0.017 g (typ.)

Note 2: Mounted on the FR4 board (glass-epoxy; 1.6 mm thick; Cu

area, 645 mm²)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-13

12 3 4 5

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