5秒后页面跳转
捷配首页

Datasheet > TPCP8A05-H
TPCP8A05-H PDF预览

TPCP8A05-H

更新时间： 2024-01-21 00:43:44
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 256K
描述
TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3V1K, 8 PIN, FET General Purpose Small Signal

阅读下载

中文翻译

获取价格

TPCP8A05-H 技术参数

生命周期：End Of Life包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.4
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：8 A最大漏源导通电阻：0.0219 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：83 pF
JESD-30 代码：R-PDSO-F8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPCP8A05-H 数据手册

 浏览型号TPCP8A05-H的Datasheet PDF文件第2页浏览型号TPCP8A05-H的Datasheet PDF文件第3页浏览型号TPCP8A05-H的Datasheet PDF文件第4页浏览型号TPCP8A05-H的Datasheet PDF文件第5页浏览型号TPCP8A05-H的Datasheet PDF文件第6页浏览型号TPCP8A05-H的Datasheet PDF文件第7页 
TPCP8A05-H  
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode  
Silicon N-Channel MOS Type (U-MOS V-H)  
TPCP8A05-H  
High Efficiency DC-DC Converter Applications  
Notebook PC Applications  
Unit: mm  
0.33±0.05  
Portable Equipment Applications  
A
M
0.05  
5
8
•
Built-in a Schottky barrier diode  
Low forward voltage: V  
High-speed switching  
Small gate charge: Q  
= −0.6 V (max)  
DSF  
•
•
•
•
•
•
0.475  
1
4
B
B
M
0.05  
= 2.7 nC (typ.)  
0.65  
SW  
2.9±0.1  
A
Low drain-source ON-resistance: R  
= 15.6 mΩ (typ.) ( V = 4.5 V)  
GS  
DS (ON)  
0.8±0.05  
High forward transfer admittance: |Y | = 25 S (typ.)  
fs  
S
0.025  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
+0.13  
-0.12  
1.12  
1.12  
+0.13  
-0.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.1  
-0.11  
0.28  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
V
30  
30  
±20  
8
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
JEDEC  
⎯
⎯
V
GSS  
JEITA  
DC  
(Note 1)  
I
D
Drain current  
A
TOSHIBA  
2-3V1K  
Pulsed (Note 1)  
I
24  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
Weight: 0.017 g (typ.)  
P
1.68  
0.84  
W
W
D
D
(t = 5 s)  
(Note 2b)  
P
Circuit Configuration  
Single-pulse avalanche energy  
(Note 3)  
E
42  
8
mJ  
A
AS  
8
7
6
5
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.039  
mJ  
AR  
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please  
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-01-19  
12345678

中文翻译

下载PDF

与TPCP8A05-H相关器件

型号 品牌 获取价格 描述 数据表
TPCP8A05-H(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSOP
TPCP8AA1 TOSHIBA

获取价格

 		TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PS-8, FET General Purpose S
TPCP8BA1 TOSHIBA

获取价格

 		TRANSISTOR 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S
TPCP8F01 TOSHIBA

获取价格

 		TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silic
TPCP8G01 TOSHIBA

获取价格

 		TRANSISTOR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3V1N, 8 PIN, BIP General Pur
TPCP8H01 TOSHIBA

获取价格

 		TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon
TPCP8H02 TOSHIBA

获取价格

 		TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon
TPCP8J01 TOSHIBA

获取价格

 		TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) ?Silicon NPN Epitaxial Type
TPCP8J01(TE85L,F) TOSHIBA

获取价格

 		MOSFET N/P-CH 32V 2-3V1G
TPCP8J01(TE85LFM) TOSHIBA

获取价格

 		Power Field-Effect Transistor

与TPCP8A05-H相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证