生命周期: | End Of Life | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.4 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.0219 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 83 pF |
JESD-30 代码: | R-PDSO-F8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPCP8A05-H(TE85L) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),TSOP | |
TPCP8AA1 | TOSHIBA |
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TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PS-8, FET General Purpose S | |
TPCP8BA1 | TOSHIBA |
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TRANSISTOR 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
TPCP8F01 | TOSHIBA |
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TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silic | |
TPCP8G01 | TOSHIBA |
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TRANSISTOR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3V1N, 8 PIN, BIP General Pur | |
TPCP8H01 | TOSHIBA |
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TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon | |
TPCP8H02 | TOSHIBA |
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TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon | |
TPCP8J01 | TOSHIBA |
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TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) ?Silicon NPN Epitaxial Type | |
TPCP8J01(TE85L,F) | TOSHIBA |
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MOSFET N/P-CH 32V 2-3V1G | |
TPCP8J01(TE85LFM) | TOSHIBA |
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Power Field-Effect Transistor |