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TPCP8A05-H PDF预览

TPCP8A05-H

更新时间： 2024-11-24 21:16:31
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 256K
描述
TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3V1K, 8 PIN, FET General Purpose Small Signal

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TPCP8A05-H 技术参数

生命周期：End Of Life包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.4
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：8 A最大漏源导通电阻：0.0219 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：83 pF
JESD-30 代码：R-PDSO-F8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPCP8A05-H 数据手册

 浏览型号TPCP8A05-H的Datasheet PDF文件第2页浏览型号TPCP8A05-H的Datasheet PDF文件第3页浏览型号TPCP8A05-H的Datasheet PDF文件第4页浏览型号TPCP8A05-H的Datasheet PDF文件第5页浏览型号TPCP8A05-H的Datasheet PDF文件第6页浏览型号TPCP8A05-H的Datasheet PDF文件第7页 
TPCP8A05-H  
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode  
Silicon N-Channel MOS Type (U-MOS V-H)  
TPCP8A05-H  
High Efficiency DC-DC Converter Applications  
Notebook PC Applications  
Unit: mm  
0.33±0.05  
Portable Equipment Applications  
A
M
0.05  
5
8
•
Built-in a Schottky barrier diode  
Low forward voltage: V  
High-speed switching  
Small gate charge: Q  
= −0.6 V (max)  
DSF  
•
•
•
•
•
•
0.475  
1
4
B
B
M
0.05  
= 2.7 nC (typ.)  
0.65  
SW  
2.9±0.1  
A
Low drain-source ON-resistance: R  
= 15.6 mΩ (typ.) ( V = 4.5 V)  
GS  
DS (ON)  
0.8±0.05  
High forward transfer admittance: |Y | = 25 S (typ.)  
fs  
S
0.025  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
+0.13  
-0.12  
1.12  
1.12  
+0.13  
-0.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.1  
-0.11  
0.28  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
1,2,3:SOURCE 4:GATE  
5,6,7,8:DRAIN  
V
30  
30  
±20  
8
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
JEDEC  
⎯
⎯
V
GSS  
JEITA  
DC  
(Note 1)  
I
D
Drain current  
A
TOSHIBA  
2-3V1K  
Pulsed (Note 1)  
I
24  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
Weight: 0.017 g (typ.)  
P
1.68  
0.84  
W
W
D
D
(t = 5 s)  
(Note 2b)  
P
Circuit Configuration  
Single-pulse avalanche energy  
(Note 3)  
E
42  
8
mJ  
A
AS  
8
7
6
5
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.039  
mJ  
AR  
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please  
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-01-19  
12345678

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