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TPCP8901(TE85L)

更新时间： 2024-11-20 19:51:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 224K
描述
TRANSISTOR,BJT,PAIR,COMPLEMENTARY,50V V(BR)CEO,800MA I(C),TSOP

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中文翻译

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TPCP8901(TE85L) 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.88最大集电极电流 (IC)：0.8 A
最小直流电流增益 (hFE)：200最高工作温度：150 °C
极性/信道类型：NPN/PNP最大功率耗散 (Abs)：1.48 W
子类别：BIP General Purpose Small Signals表面贴装：YES
Base Number Matches：1

TPCP8901(TE85L) 数据手册

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TPCP8901  
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)  
TPCP8901  
Portable Equipment Applications  
Unit: mm  
Switching Applications  
0.33±0.05  
A
M
0.05  
5
8
•
•
Small footprint due to small and thin package  
High DC current gain : PNP  
:NPN  
h
= 200 to 500 (I = −0.1 A)  
FE C  
h
= 400 to 1000 (I = 0.1 A)  
C
FE  
0.475  
1
4
B
B
M
0.05  
•
•
Low collector-emitter saturation : PNP  
: NPN  
V
= −0.20 V (max)  
0.65  
CE (sat)  
CE (sat)  
2.9±0.1  
A
V
= 0.17 V (max)  
0.8±0.05  
High-speed switching : PNP t = 70 ns (typ.)  
f
S
0.025  
: NPN t = 85 ns (typ.)  
f
+0.1  
S
0.28  
0.17±0.02  
-0.11  
+0.13  
-0.12  
1.12  
1.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.13  
-0.12  
Rating  
Characteristics  
Symbol  
Unit  
+0.1  
0.28  
PNP  
−50  
−50  
−7  
NPN  
100  
50  
-0.11  
1.Emitter1  
5.Collector2  
6.Collector2  
7.Collector1  
8.Collector1  
2.Base1  
3.Emitter2  
4.Base2  
Collector-base voltage  
V
CBO  
V
CEO  
V
EBO  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
JEDEC  
JEITA  
―
―
7
DC (Note 1)  
I
−0.8  
−5.0  
1.0  
5.0  
C
Collector current  
A
TOSHIBA  
2-3V1C  
Pulse (Note 1 )  
I
CP  
Weight: 0.017 g (typ.)  
Base current  
I
−100  
100  
mA  
B
Single-device  
operation  
1.48  
Collector power  
dissipation (t = 10s)  
P
P
(Note 2)  
(Note 2)  
W
W
C
C
Single-device  
value at dual  
operation  
0.80  
0.83  
Single-device  
operation  
Collector power  
dissipation (DC)  
Single-device  
value at dual  
operation  
0.48  
150  
Junction temperature  
T
j
°C  
°C  
Storage temperature range  
T
−55 to 150  
stg  
Note 1: Please use devices on condition that the junction temperature is below 150℃.  
Icp=±5A (@ t≦100μs)  
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-13  
1234567

中文翻译

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