是否Rohs认证: | 不符合 | 生命周期: | End Of Life |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 8 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.68 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPCP8AA1 | TOSHIBA |
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TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PS-8, FET General Purpose S | |
TPCP8BA1 | TOSHIBA |
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TRANSISTOR 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
TPCP8F01 | TOSHIBA |
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TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silic | |
TPCP8G01 | TOSHIBA |
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TRANSISTOR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3V1N, 8 PIN, BIP General Pur | |
TPCP8H01 | TOSHIBA |
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TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon | |
TPCP8H02 | TOSHIBA |
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TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon | |
TPCP8J01 | TOSHIBA |
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TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) ?Silicon NPN Epitaxial Type | |
TPCP8J01(TE85L,F) | TOSHIBA |
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MOSFET N/P-CH 32V 2-3V1G | |
TPCP8J01(TE85LFM) | TOSHIBA |
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Power Field-Effect Transistor | |
TPCP8J01_07 | TOSHIBA |
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TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type |