Datasheet > TPC8227-H,LQ

TPC8227-H,LQ

更新时间： 2024-10-02 21:00:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	257K
描述
Small Signal Field-Effect Transistor

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TPC8227-H,LQ 技术参数

TPC8227-H

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TPC8227-H

1. Applications

•

DC-DC Converters

•

CCFL Inverters

2. Features

(1) Small, thin package

(2) High-speed switching

(3) Small gate charge: QSW = 2.4 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 3: Source

2, 4: Gate

5, 6, 7, 8: Drain

SOP-8

Start of commercial production

2012-05

2014-01-07

Rev.2.0

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TPC8228-H	TOSHIBA	获取价格	Nch dual
TPC8228-H,LQ	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
TPC8229-H	TOSHIBA	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
TPC8229-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,80V V(BR)DSS,3.2A I(D),SO
TPC8229-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,80V V(BR)DSS,3.2A I(D),SO
TPC82A12	ETC	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE\|109V V(BO) MAX\|300MA I(S)\|TO-220
TPC82A18	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,109V V(BO) MAX,300MA I(S),TO-220
TPC82B12	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,99V V(BO) MAX,300MA I(S),TO-220
TPC82B18	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,99V V(BO) MAX,300MA I(S),TO-220
TPC8301	TOSHIBA	获取价格	Silicon P Channel MOS Type (L2−MOSVI)