是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
Factory Lead Time: | 18 weeks | 风险等级: | 1.06 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 1693610 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | TN5325K1-G | Samacsys Released Date: | 2018-12-26 09:36:37 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 0.15 A | 最大漏源导通电阻: | 7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 23 pF |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.36 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
VN2410L-G | MICROCHIP |
功能相似 |
N-Channel Enhancement-Mode Vertical DMOS FET | |
TN5325K1-G | SUPERTEX |
功能相似 |
Small Signal Field-Effect Transistor, 0.15A I(D), 250V, 1-Element, N-Channel, Silicon, Met | |
TN5325K1 | SUPERTEX |
功能相似 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TN5325K1GP002 | MICROCHIP |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FET | |
TN5325N3 | SUPERTEX |
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N-Channel Enhancement-Mode Vertical DMOS FETs | |
TN5325N3-G | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.215A I(D), 250V, 1-Element, N-Channel, Silicon, Me | |
TN5325N3-G | MICROCHIP |
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215mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
TN5325N3GP002 | MICROCHIP |
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N-Channel Enhancement-Mode Vertical DMOS FET | |
TN5325N3-G-P002 | MICROCHIP |
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MOSFET N-CH 250V 0.215A TO92-3 | |
TN5325N8 | SUPERTEX |
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N-Channel Enhancement-Mode Vertical DMOS FETs | |
TN5325N8-G | SUPERTEX |
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Power Field-Effect Transistor, 0.316A I(D), 250V, 250ohm, 1-Element, N-Channel, Silicon, M | |
TN5325N8-G | MICROCHIP |
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0.316A, 250V, 250ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA | |
TN5325N8GP002 | MICROCHIP |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FET |