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TN5335

更新时间： 2024-11-09 14:53:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
5页 657K
描述
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure

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TN5335 数据手册

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TN5335  
Supertex inc.  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
► Low threshold  
This low threshold, enhancement-mode (normally-off)  
transistor utilizes a vertical DMOS structure and Supertex’s  
well-proven, silicon-gate manufacturing process. This  
combination produces a device with the power handling  
capabilities of bipolar transistors and the high input impedance  
and positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced secondary  
breakdown.  
► High input impedance  
► Low input capacitance  
► Fast switching speeds  
► Low on-resistance  
► Free from secondary breakdown  
► Low input and output leakage  
► Complementary N- and P-channel devices  
Applications  
► Logic level interfaces - ideal for TTL and CMOS  
► Solid state relays  
► Battery operated systems  
► Photo voltaic drives  
► Analog switches  
► General purpose line drivers  
► Telecom switches  
Supertex’s vertical DMOS FETs are ideally suited to a wide  
range of switching and amplifying applications where very  
low threshold voltage, high breakdown voltage, high input  
impedance, low input capacitance, and fast switching speeds  
are desired.  
Ordering Information  
Product Summary  
RDS(ON)  
ID(ON)  
Part Number  
Package Option  
TO-236AB (SOT-23) 3000/Reel  
TO-243AA (SOT-89) 2000/Reel  
Packing  
VGS(th)  
(max)  
BVDSS/BVDGS  
(max)  
(min)  
TN5335K1-G  
TN5335N8-G  
350V  
15Ω  
750mA  
2.0V  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
Pin Configuration  
DRAIN  
DRAIN  
Absolute Maximum Ratings  
Parameter  
Value  
BVDSS  
BVDGS  
±20V  
SOURCE  
GATE  
Drain-to-source voltage  
Drain-to-gate voltage  
SOURCE  
DRAIN  
GATE  
Gate-to-source voltage  
TO-236AB (SOT-23)  
TO-243AA (SOT-89)  
Operating and storage temperature  
-55OC to +150OC  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Product Marking  
W = Code for week sealed  
N3SW  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
Typical Thermal Resistance  
TO-236AB (SOT-23)  
Package  
θja  
W = Code for week sealed  
203OC/W  
173OC/W  
TN3SW  
TO-236AB (SOT-23)  
TO-243AA (SOT-89)  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
TO-243AA (SOT-89)  
Doc.# DSFP-TN5335  
B081213  
Supertex inc.  
www.supertex.com  
12345

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