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TN5335N8-G

更新时间： 2024-09-20 21:19:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 开关脉冲晶体管
页数 文件大小 规格书
5页 631K
描述
0.11A, 350V, 15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA

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中文翻译

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TN5335N8-G 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-F3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：5 weeks
风险等级：1.11其他特性：LOGIC LEVEL COMPATIBLE
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：350 V最大漏极电流 (ID)：0.11 A
最大漏源导通电阻：15 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-243AAJESD-30 代码：R-PSSO-F3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.6 W
最大脉冲漏极电流 (IDM)：1.3 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：FLAT
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TN5335N8-G 数据手册

 浏览型号TN5335N8-G的Datasheet PDF文件第2页浏览型号TN5335N8-G的Datasheet PDF文件第3页浏览型号TN5335N8-G的Datasheet PDF文件第4页浏览型号TN5335N8-G的Datasheet PDF文件第5页 
TN5335  
Supertex inc.  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
► Low threshold  
This low threshold, enhancement-mode (normally-off)  
transistor utilizes a vertical DMOS structure and Supertex’s  
well-proven, silicon-gate manufacturing process. This  
combination produces a device with the power handling  
capabilities of bipolar transistors and the high input impedance  
and positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced secondary  
breakdown.  
► High input impedance  
► Low input capacitance  
► Fast switching speeds  
► Low on-resistance  
► Free from secondary breakdown  
► Low input and output leakage  
► Complementary N- and P-channel devices  
Applications  
► Logic level interfaces - ideal for TTL and CMOS  
► Solid state relays  
► Battery operated systems  
► Photo voltaic drives  
► Analog switches  
► General purpose line drivers  
► Telecom switches  
Supertex’s vertical DMOS FETs are ideally suited to a wide  
range of switching and amplifying applications where very  
low threshold voltage, high breakdown voltage, high input  
impedance, low input capacitance, and fast switching speeds  
are desired.  
Ordering Information  
Product Summary  
RDS(ON)  
ID(ON)  
Part Number  
Package Option  
TO-236AB (SOT-23) 3000/Reel  
TO-243AA (SOT-89) 2000/Reel  
Packing  
VGS(th)  
(max)  
BVDSS/BVDGS  
(max)  
(min)  
TN5335K1-G  
TN5335N8-G  
350V  
15Ω  
750mA  
2.0V  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
Pin Configuration  
DRAIN  
DRAIN  
Absolute Maximum Ratings  
Parameter  
Value  
BVDSS  
BVDGS  
±20V  
SOURCE  
GATE  
Drain-to-source voltage  
Drain-to-gate voltage  
SOURCE  
DRAIN  
GATE  
Gate-to-source voltage  
TO-236AB (SOT-23)  
TO-243AA (SOT-89)  
Operating and storage temperature  
-55OC to +150OC  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Product Marking  
W = Code for week sealed  
N3SW  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
Typical Thermal Resistance  
TO-236AB (SOT-23)  
Package  
θja  
W = Code for week sealed  
203OC/W  
173OC/W  
TN3SW  
TO-236AB (SOT-23)  
TO-243AA (SOT-89)  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
TO-243AA (SOT-89)  
Doc.# DSFP-TN5335  
B081213  
Supertex inc.  
www.supertex.com  
12345

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