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TN5335K1-G PDF预览

TN5335K1-G

更新时间： 2024-09-20 21:13:39
品牌 Logo 应用领域
超科 - SUPERTEX 开关光电二极管晶体管
页数 文件大小 规格书
2页 438K
描述
Small Signal Field-Effect Transistor, 0.11A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, GREEN PACKAGE-3

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TN5335K1-G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：SOT-23
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.31
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：350 V
最大漏极电流 (ID)：0.11 A最大漏源导通电阻：15 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：22 pF
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.36 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TN5335K1-G 数据手册

 浏览型号TN5335K1-G的Datasheet PDF文件第2页 
TN5335  
Low Threshold  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
(max)  
VGS(th)  
(max)  
ID(ON)  
(min)  
BVDGS  
TO-236AB  
TO-243AA*  
Wafer  
350V  
15Ω  
2.0V  
750mA  
TN5335K1  
TN5335N8  
TN5335NW  
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
Features  
Product marking for SOT-23  
Product marking for TO-243AA  
❏
❏
❏
❏
❏
❏
❏
Low threshold – 2.0V max.  
N3S❋  
Where❋=2-weekalphadatecode  
TN3S❋  
Where❋=2-weekalphadatecode  
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on resistance  
Low Threshold DMOS Technology  
Free from secondary breakdown  
Low input and output leakage  
These low threshold enhancement-mode (normally-off) transis-  
tors utilize a vertical DMOS structure and Supertex's well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally induced secondary breakdown.  
Applications  
❏
❏
❏
❏
❏
❏
❏
❏
Logic level interfaces – ideal for TTL and CMOS  
Solid state relays  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, highbreakdownvoltage, highinputimpedance, lowinput  
capacitance, and fast switching speeds are desired.  
Battery operated systems  
Photo voltaic drives  
Analog switches  
General purpose line drivers  
Telecom switches  
Package Options  
Modem hook switches  
D
D
G
Absolute Maximum Ratings  
G
S
D
S
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
BVDSS  
BVDGS  
± 20V  
TO-236AB  
(SOT-23)  
top view  
TO-243AA  
(SOT-89)  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
12

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TN5335K1-G 替代型号

型号 品牌 替代类型 描述 数据表
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