Datasheet > TN5335

TN5335

更新时间： 2024-09-19 22:19:27

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	446K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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TN5335 数据手册

TN5335

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

TO-236AB

TO-243AA*

Wafer

350V

15Ω

2.0V

750mA

TN5335K1

TN5335N8

TN5335NW

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Features

Product marking for SOT-23

Product marking for TO-243AA

❏

Low threshold – 2.0V max.

N3S❋

Where❋=2-weekalphadatecode

TN3S❋

Where❋=2-weekalphadatecode

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Low Threshold DMOS Technology

Free from secondary breakdown

Low input and output leakage

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally induced secondary breakdown.

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Package Options

Modem hook switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

TO-236AB

(SOT-23)

top view

TO-243AA

(SOT-89)

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TN5335相关器件

型号	品牌	获取价格	描述	数据表
TN5335K1	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN5335K1-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.11A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN5335K1-G	MICROCHIP	获取价格	110mA, 350V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
TN5335N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN5335N8-G	MICROCHIP	获取价格	0.11A, 350V, 15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
TN5335NW	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN5338	APITECH	获取价格	Wide Band Medium Power Amplifier, 5MHz Min, 150MHz Max, SM3, 4 PIN
TN5338PM	APITECH	获取价格	Wide Band Medium Power Amplifier, 5MHz Min, 150MHz Max, SM3, 4 PIN
TN5347	APITECH	获取价格	Wide Band Low Power Amplifier, 20MHz Min, 1100MHz Max, SM3, 4 PIN
TN5352	APITECH	获取价格	Wide Band Low Power Amplifier, 10MHz Min, 300MHz Max, SM-3, 4 PIN

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