5秒后页面跳转
TN5325N3GP002 PDF预览

TN5325N3GP002

更新时间: 2024-09-21 02:52:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
14页 596K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

TN5325N3GP002 数据手册

 浏览型号TN5325N3GP002的Datasheet PDF文件第2页浏览型号TN5325N3GP002的Datasheet PDF文件第3页浏览型号TN5325N3GP002的Datasheet PDF文件第4页浏览型号TN5325N3GP002的Datasheet PDF文件第5页浏览型号TN5325N3GP002的Datasheet PDF文件第6页浏览型号TN5325N3GP002的Datasheet PDF文件第7页 
TN5325  
N-Channel Enhancement-Mode Vertical DMOS FET  
Features  
General Description  
• Low Threshold (2V Maximum)  
The TN5325 is a low-threshold, Enhancement-mode  
(normally-off) transistor that utilizes a vertical DMOS  
structure and a well-proven silicon gate manufacturing  
process. This combination produces a device with the  
power handling capabilities of bipolar transistors and  
the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of  
all MOS structures, this device is free from thermal  
runaway and thermally induced secondary breakdown.  
• High Input Impedance and High Gain  
• Free from Secondary Breakdown  
• Low CISS and Fast Switching Speeds  
Applications  
• Logic-level Interfaces (Ideal for TTL and CMOS)  
• Solid State Relays  
Microchip’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications  
where very low threshold voltage, high breakdown  
voltage, high input impedance, low input capacitance  
and fast switching speeds are desired.  
• Battery-operated Systems  
• Photo-voltaic Drives  
• Analog Switches  
• General Purpose Line Drivers  
Telecommunication Switches  
Package Types  
3-lead SOT-23 (TO-236AB)  
3-lead TO-92  
(Top view)  
3-lead SOT-89 (243AA)  
(Top view)  
(Top view)  
DRAIN  
DRAIN  
SOURCE  
DRAIN  
GATE  
SOURCE  
DRAIN  
GATE  
SOURCE  
GATE  
See Table 2-1, Table 2-2 and Table 2-3 for pin information.  
2017 Microchip Technology Inc.  
DS20005709A-page 1  

与TN5325N3GP002相关器件

型号 品牌 获取价格 描述 数据表
TN5325N3-G-P002 MICROCHIP

获取价格

MOSFET N-CH 250V 0.215A TO92-3
TN5325N8 SUPERTEX

获取价格

N-Channel Enhancement-Mode Vertical DMOS FETs
TN5325N8-G SUPERTEX

获取价格

Power Field-Effect Transistor, 0.316A I(D), 250V, 250ohm, 1-Element, N-Channel, Silicon, M
TN5325N8-G MICROCHIP

获取价格

0.316A, 250V, 250ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
TN5325N8GP002 MICROCHIP

获取价格

N-Channel Enhancement-Mode Vertical DMOS FET
TN5325PM APITECH

获取价格

Wide Band Medium Power Amplifier, 5MHz Min, 125MHz Max, SM3, 4 PIN
TN5335 SUPERTEX

获取价格

N-Channel Enhancement-Mode Vertical DMOS FETs
TN5335 MICROCHIP

获取价格

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TN5335K1 SUPERTEX

获取价格

N-Channel Enhancement-Mode Vertical DMOS FETs
TN5335K1-G SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.11A I(D), 350V, 1-Element, N-Channel, Silicon, Met