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STP16N65M5 PDF预览

STP16N65M5

更新时间: 2024-11-26 12:27:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
19页 1372K
描述
N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

STP16N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:2.29Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180305
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220 TYPE A
Samacsys Released Date:2015-07-22 14:47:13Is Samacsys:N
其他特性:ULTRA-LOW RESISTANCE雪崩能效等级(Eas):200 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.279 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP16N65M5 数据手册

 浏览型号STP16N65M5的Datasheet PDF文件第2页浏览型号STP16N65M5的Datasheet PDF文件第3页浏览型号STP16N65M5的Datasheet PDF文件第4页浏览型号STP16N65M5的Datasheet PDF文件第5页浏览型号STP16N65M5的Datasheet PDF文件第6页浏览型号STP16N65M5的Datasheet PDF文件第7页 
STB16N65M5  
STD16N65M5  
N-channel 650 V, 0.230 , 12 A MDmesh™ V Power MOSFET  
in D²PAK, DPAK  
Features  
VDSS  
TJmax  
@
RDS(on)  
max.  
Type  
ID  
TAB  
TAB  
STB16N65M5  
STD16N65M5  
710 V  
< 0.279 Ω  
12 A  
3
3
1
1
DPAK worldwide best R  
DS(on)  
DPAK  
PAK  
Higher V  
rating  
DSS  
High dv/dt capability  
Excellent switching performance  
Easy to drive  
100% avalanche tested  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
$ꢅꢆꢇ4!"ꢈ  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
resistance, which is unmatched among silicon  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
DPAK  
Packaging  
Tape and reel  
STB16N65M5  
STD16N65M5  
16N65M5  
October 2011  
Doc ID 18146 Rev 2  
1/19  
www.st.com  
19  

STP16N65M5 替代型号

型号 品牌 替代类型 描述 数据表
STU16N65M5 STMICROELECTRONICS

完全替代

12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
SIHP12N60E-GE3 VISHAY

功能相似

Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met
IPP60R299CP INFINEON

功能相似

CoolMOS Power Transistor

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