Datasheet > STGWA50M65DF2

STGWA50M65DF2

更新时间： 2024-11-26 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
15页	315K
描述
沟槽栅场截止IGBT，M系列，650 V、50 A，低损耗

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STGWA50M65DF2 数据手册

STGWA50M65DF2

Datasheet

Trench gate field-stop 650 V, 50 A low-loss M series IGBT

in a TO-247 long leads package

Features

•

Maximum junction temperature: T_J= 175 °C

6 μs of minimum short-circuit withstand time

V_CE(sat)= 1.65 V (typ.) @ I_C= 50 A

Tight parameter distribution

Safer paralleling

TO-247 long leads

Positive V_CE(sat)temperature coefficient

Low thermal resistance

C (2)

Soft- and fast-recovery antiparallel diode

Applications

•

Motor control

G (1)

UPS

PFC

General purpose inverter

Sc12850_no_tab

E (3)

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive V_CE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Product status link

STGWA50M65DF2

Product summary

Order code

Marking

STGWA50M65DF2

G50M65DF2

TO-247 long leads

Tube

Package

Packing

DS11402 - Rev 4 - March 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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